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Fotomaske Fotomasken (englisch reticle) sind Projektionsvorlagen

Категория: Информатика

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Fotomasken (englisch reticle) sind Projektionsvorlagen, deren Hauptanwendung die fotolithografische Strukturierung bei der Herstellung von mikroelektronischen Schaltungen oder Mikrosystemen ist. Sie bestehen üblicherweise aus hochreinem Quarzglas oder Calciumfluorid (Lithografie mit Excimer-Laser der Wellenlänge 248 nm bzw. 193 nm) und sind beispielsweise auf einer Seite mit einer dünnen strukturierten Chromschicht versehen.

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«Fotomaske Fotomasken (englisch reticle) sind Projektionsvorlagen»

Lecture4  Photomask equipment Author of presentation Ivanova Elvira

Lecture4 Photomask equipment

Author of presentation

Ivanova Elvira

Multi-shaped e-beam technology for mask writing   Photomask lithography for the 22nm technology node and beyond requires new approaches in equipment as well as mask design. Multi Shaped Beam technology (MSB) for photomask patterning using a matrix of small beamlets instead of just one shaped beam, is a very effective and evolutionary enhancement of the well established Variable Shaped Beam (VSB) technique. Its technical feasibility has been successfully demonstrated [2]. One advantage of MSB is the productivity gain over VSB with decreasing critical dimensions (CDs) and increasing levels of optical proximity correction (OPC) or for inverse lithography technology (ILT) and source mask optimization (SMO) solutions. 

Multi-shaped e-beam technology for mask writing

  • Photomask lithography for the 22nm technology node and beyond requires new approaches in equipment as well as mask design. Multi Shaped Beam technology (MSB) for photomask patterning using a matrix of small beamlets instead of just one shaped beam, is a very effective and evolutionary enhancement of the well established Variable Shaped Beam (VSB) technique. Its technical feasibility has been successfully demonstrated [2]. One advantage of MSB is the productivity gain over VSB with decreasing critical dimensions (CDs) and increasing levels of optical proximity correction (OPC) or for inverse lithography technology (ILT) and source mask optimization (SMO) solutions. 
Multi-shaped e-beam technology for mask writing     This makes MSB an attractive alternative to VSB for photomask lithography at future technology nodes. MSB integrates the electron optical column, x/y stage and data path into an operational electron beam lithography system. Multi e-beam mask writer specific requirements concerning the computational lithography and their implementation are outlined here. Data preparation of aggressive OPC layouts, shot count reductions over VSB, data path architecture, write time simulation and several aspects of the exposure process sequence are also discussed. Analysis results of both the MSB processing and the write time of full 32nm and 22nm node critical layer mask layouts are presented as an example.

Multi-shaped e-beam technology for mask writing

  •   This makes MSB an attractive alternative to VSB for photomask lithography at future technology nodes. MSB integrates the electron optical column, x/y stage and data path into an operational electron beam lithography system. Multi e-beam mask writer specific requirements concerning the computational lithography and their implementation are outlined here. Data preparation of aggressive OPC layouts, shot count reductions over VSB, data path architecture, write time simulation and several aspects of the exposure process sequence are also discussed. Analysis results of both the MSB processing and the write time of full 32nm and 22nm node critical layer mask layouts are presented as an example.


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